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APM2313
P-Channel Enhancement Mode MOSFET
Features
* * * *
-20V/-1.8A , RDS(ON)=108m(typ.) @ VGS=-4.5V RDS(ON)=135m(typ.) @ VGS=-2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package
Pin Description
D
G
S
Top View of SOT-23
Applications
*
Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
G
S
Ordering and Marking Information
A P M 23 13
H andling C ode T em p. R an ge Package Code
D
P-Channel MOSFET
Package Code A : S O T -23 O perating Junction T em p. R ange C : -55 to 1 50 C H andling C ode T R : T ape & R eel
A P M 2313 A :
M 13X
X - D ate C ode
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter
(TA = 25C unless otherwise noted)
Rating -20 10 -1.8 -7 A V Unit
Maximum Drain Current - Continuous Maximum Drain Current - Pulsed
* Surface Mounted on FR4 Board, t 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 1 www.anpec.com.tw
APM2313
Absolute Maximum Ratings (Cont.)
Symbol PD Parameter Maximum Power Dissipation TA=25C TA=100C TJ TSTG RjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient
(TA = 25C unless otherwise noted)
Rating 1.25 0.5 150 -55 to 150 100 W C C C/W Unit
Electrical Characteristics
Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa
b
(TA = 25C unless otherwise noted)
APM2313 Min. Typ. Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
VGS=0V , IDS=-250A VDS=-16V , VGS=0V VDS=VGS , IDS=-250A VGS=10V , VDS=0V VGS=-4.5V , IDS=-1.8A VGS=-2.5V , IDS=-0.8A ISD=-0.5A , VGS=0V VDS=-10V , IDS= -1.8A , VGS=-4.5V
-20 -1 -0.5 -0.7 108 135 -0.8 5.3 1.04 0.62 8 16 15 35 15 -1 100 140 175 -1.3 7
V A V nA m V
Dynamic Qg Total Gate Charge Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance
nC
VDD=-10V , IDS=-1A , VGEN=-4.5V , RG=6 VGS=0V
7 18 8 435 120 65
ns
VDS=-15V Reverse Transfer Capacitance Frequency=1.0MHz
pF
Notes
a b
: Pulse test ; pulse width 300s, duty cycle 2% : Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003
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APM2313
Typical Characteristics
Output Characteristics
7 6
-VGS=3,4,5,6,7,8,9,10V
Transfer Characteristics
7 6
-ID-Drain Current (A)
5 4 3 2 1
-ID-Drain Current (A)
-VGS=2V
5 4 3 2
TJ=125C
TJ=25C
1
-VGS=1V
TJ=-55C
0
0
1
2
3
4
5
0 0.0
0.5
1.0
1.5
2.0
2.5
-VDS - Drain-to-Source Voltage (V)
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.75
-IDS=250A
On-Resistance vs. Drain Current
0.18 0.17
-VGS(th)-Threshold Voltage (V) (Normalized)
RDS(ON)-On-Resistance ()
1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50
0.16 0.15 0.14 0.13 0.12 0.11 0.10 0.09
-VGS=2.5V
-VGS=4.5V
-25
0
25
50
75
100 125 150
0.08
0
1
2
3
4
5
6
7
Tj - Junction Temperature (C)
-ID - Drain Current (A)
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003
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APM2313
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.16 0.15
-ID=1.8A
On-Resistance vs. Junction Temperature
2.5
-VGS=4.5V -ID=1.8A
RDS(ON)-On-Resistance ()
RDS(ON)-On-Resistance () (Normalized)
1 2 3 4 5 6 7 8 9 10
0.14 0.13 0.12 0.11 0.10 0.09 0.08 0.07 0.06
2.0
1.5
1.0
0.5
0.0 -50
-25
0
25
50
75
100 125 150
-VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (C)
Gate Charge
5 600
-VDS=10V -ID=1.8A
Capacitance
Frequency=1MHz
-VGS-Gate-Source Voltage (V)
4
500
Ciss
Capacitance (pF)
400 300 200
Coss
3
2
1
100 0
Crss
0
0
1
2
3
4
5
6
0
5
10
15
20
QG - Gate Charge (nC)
-VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003
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APM2313
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
10 10
Single Pulse Power
-IS-Source Current (A)
8
Power (W)
6
1
TJ=150C TJ=25C
4
2
0.1 0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
0 0.01
0.1
1
10
100
500
-VSD -Source-to-Drain Voltage (V)
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient Thermal Impedance
1
Duty Cycle=0.5
D=0.2 D=0.1
0.1
D=0.05 D=0.02
1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=100C/W 3.TJM-TA=PDMZthJA SINGLE PULSE
D=0.01
0.01 1E-4
1E-3
0.01
0.1
1
10
100
500
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003
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APM2313
Packaging Information
SOT-23
D B
3 E 1 2 H
S e
A
A1
L
C
Dim A A1 B C D E e H L
M illim et er s M in. 1. 0 0 0. 0 0 0. 3 5 0. 1 0 2. 7 0 1. 4 0 1. 9 0 B SC 2. 4 0 0. 3 7 3. 0 0 0. 0 94 0. 0 01 5 M ax. 1. 3 0 0. 1 0 0. 5 1 0. 2 5 3. 1 0 1. 8 0 M in. 0. 0 39 0. 0 00 0. 0 14 0. 0 04 0. 1 06 0. 0 55
Inc he s M ax. 0. 0 51 0. 0 04 0. 0 20 0. 0 10 0. 1 22 0. 0 71 0. 0 75 B SC 0. 11 8
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003
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APM2313
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
temperature
Peak temperature
183C Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max.
60 seconds 215-219C or 235 +5/-0C 10 C /second max.
Package Reflow Conditions
pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003
pkg. thickness < 2.5mm and pkg. volume 350 mm
pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C
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APM2313
Reliability test program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles
Carrier Tape
Po E P1 P D
t
F W
Bo
Ao
Ko D1
T2
J C A B
T1
Application
A 1781
B 72 1.0 D 1.5 +0.1
C
J
T1 8.4 2 P1
T2 1.5 0.3 Ao
13.0 + 0.2 2.5 0.15 D1 1.5 +0.1 Po 4.0 0.1
W 8.0+ 0.3 - 0.3 Bo 3.2 0.1
P 4 0.1 Ko 1.4 0.1
E 1.75 0.1 t 0.20.03
SOT-23
F 3.5 0.05
2.0 0.1 3.15 0.1
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003
8
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APM2313
Cover Tape Dimensions
Application SOT- 23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003
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